St introduction to reduce the resistance of the 60V MOSFET
St in September 7, 2015 released a reduced MOSFET resistance +60V power STripFETF7MOSFET series". The series belongs to the N channel, which not only reduces the resistance, but also reduces the input and output capacitance and gate charge. "The product of the resistance and the gate charge of the gate is excellent," the company said ". In addition, the reverse recovery charge of the body diode is small, so it is suitable for high speed switch operation. Not only for communication equipment, servers, desktop computers, industrial equipment of the DC-DC converter, but also suitable for photovoltaic power generation with a micro inverter, etc..
The series is the use of the channel structure of the power MOSFET. St introduced a variety of packaging products. Prepare the package has PowerFLAT5 x 6, PowerFLAT3.3 x 3.3, DPAK, D2PAK, TO-220, 2-laedH2PAK and 6-leadH2PAK.
The PowerFLAT5 * 6 package "STL90N6F7" features are as follows: the maximum leakage current is 360A, the threshold voltage is +2V, the maximum value is 5.4m, the gate voltage is +4V, the gate source voltage is +10V, the total gate charge is 1600pF (nominal value), the output capacitor is 66pF (nominal value), the reverse recovery time is 39.6ns (nominal value), the reverse recovery charge is 36nC (nominal value). The ratio between the feedback capacitor and the input capacitor is small, so the electromagnetic radiation noise (EMI) can be reduced. Maximum working junction temperature is +175. Bulk purchase of 1000, the United States for the reference price of $0.98. All products of different packages have been started.
last:
Europe continued to dominate the market in Asia Pacific region 2016 or beyond next:没有了!