Can be used for the advent of new insulation layer of flexible electronic devices.
Researchers have developed a high performance, ultra thin polymer insulator for field effect transistors (transistors field-effect, FETs). They have successfully used a variety of surfaces to prepare polymer films, such as plastics, which lay the foundation for future applications in electronic devices.
The principle shows how to use chemical vapor deposition (iCVD) technique to prepare pV3D3 polymer film: (I) by introducing a single agent and initiator, (II) the initiator is heated to decompose into free radicals, (III) monomer and initiator free radicals are adsorbed onto a substrate (IV). (photo: KAIST)
Advanced Institute and Science of Technology Korea (KAIST) team developed a high performance ultra thin polymer insulator for field effect transistors. They have successfully used a variety of surfaces to prepare polymer films, such as plastics, which lay the foundation for future applications in electronic devices. The results of the study were published online in the journal Nature & materials (Materials Nature).
Modern electronic devices used in our daily life, from cell phones, computers to flat panel displays, and field effect transistors are everywhere. In addition to three electrodes (Zha Ji (gate), source (source) and drain (drain)), the field effect tube also includes an insulating layer and a semiconductor channel layer. The insulation layer in the field effect tube can effectively control the electric conductivity of the semiconductor channel, and thus control the current in the transistor. In order to make the field effect tube low power stable operation, the application of ultra thin insulation layer is very important. Inorganic materials, such as oxides and nitrogen oxides, have excellent insulation and reliability, and the insulation layer is usually made of such inorganic materials as hard surfaces, such as silicon and glass.
However, due to the high hardness and high temperature of the insulation layer, they are very difficult to be used for flexible electronic devices. In recent years, a large number of researchers have studied the polymer as a promising material to study, in order to apply the flexible non conventional substrate and the emerging semiconductor material. However, the surface coverage of the polymer insulation in the traditional technology is still insufficient, which hinders the application of the field effect tube which is used in the application of polymer insulator under low voltage state.
A research team led by Professor Gap Seunghyup and Jin Cho Sung, a professor of engineering and Electronics Engineering, Yoo Byung, a research team led by the South Korean science and Technology Institute (KAIST), has developed an insulating layer of organic polymers. "PV3D3". The insulation layer is made of the full dry gas phase technique called "chemical vapor deposition (iCVD)", which can make it less than 10 nm (nm) in the case of the perfect insulation characteristics.
ICVD process is to allow gaseous monomer and initiator agent in low vacuum in contact with each other and finally deposited on the substrate of conformal polymer film has good insulating properties. ICVD is not the same as the traditional technology is very uniform and pure ultra-thin polymer film in a large area in fact no surface or the bottom limit of the region is generated, and the surface tension of the problem will be solved. And most of the iCVD polymers are generated at room temperature, reducing the tension and damage caused by the substrate.
The research team developed a variety of semiconductor materials such as organic matter, graphene oxide and low power, high performance of the field effect tube through the use of pV3D3 insulation layer, proved the wide applicability of pV3D3 for a variety of materials. They also use conventional packaging tape as a substrate, producing a paste, removable electronic components. In Korea Dongguk University (Dongguk University) Yong-Young Noh professor of cooperation, the research team successfully combined with pV3D3 insulating layer in a large-scale flexible bottom developed a transistor array.
Professor Im said: "the small size and wide applicability of pV3D3 made by iCVD technology are unprecedented in the polymer insulator. Even though our pV3D3 iCVD polymer film thickness is reduced to 10 nm, it is shown that the insulation is still better than the inorganic insulation layer. We hope that this progress will be very useful for the development of flexible electronic devices, which will play a key role in the success of new electronic devices such as wearable computers."
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